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Michael R Feldbaum

age ~72

from San Jose, CA

Also known as:
  • Michael E Feldbaum
  • Michael R Felbaum
  • Mikhail Feldbaum
  • Natella Feldbaum
5314 Sigrid Way, San Jose, CA 95123

Michael Feldbaum Phones & Addresses

  • 5314 Sigrid Way, San Jose, CA 95123
  • 950 Meridian Ave, San Jose, CA 95126
  • Livonia, MI
  • 4875 Mowry Ave, Fremont, CA 94538 • 510-7969861
  • San Bernardino, CA
  • Santa Clara, CA
  • Wayne, MI

Resumes

Us Patents

  • Prevention Of Electrostatic Wafer Sticking In Plasma Deposition/Etch Tools

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  • US Patent:
    7030035, Apr 18, 2006
  • Filed:
    May 14, 2004
  • Appl. No.:
    10/845651
  • Inventors:
    Donald G. Allen - Morgan Hill CA,
    Richard Jule Contreras - San Jose CA,
    Michael Feldbaum - San Jose CA,
    Dominic Frank Truchetta - Livermore CA,
  • Assignee:
    Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam
  • International Classification:
    H01L 21/31
    H01L 21/469
  • US Classification:
    438758, 438729
  • Abstract:
    To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.
  • Method Of Manufacturing A Perpendicular Magnetic Recording Write Head With Notched Trailing Shield

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  • US Patent:
    7748103, Jul 6, 2010
  • Filed:
    Apr 24, 2006
  • Appl. No.:
    11/379969
  • Inventors:
    Donald G. Allen - Morgan Hill CA,
    Amanda Baer - Campbell CA,
    Michael Feldbaum - San Jose CA,
    Wen-Chien David Hsiao - San Jose CA,
    Vladimir Nikitin - Campbell CA,
    Aron Pentek - San Jose CA,
    Katalin Pentek - San Jose CA,
  • Assignee:
    Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
  • International Classification:
    G11B 5/187
    G11B 5/23
  • US Classification:
    2960315, 2960313, 2960311, 2960318, 36012503, 36011902
  • Abstract:
    A perpendicular magnetic recording write head has a write pole, a trapezoidal-shaped trailing shield notch, and a metal gap layer between the write pole and notch. The write pole has a trailing edge that has a width substantially defining the track width and that faces the front edge of the notch but is spaced from it by the gap layer. The write head is fabricated by reactive ion beam etching of a thin mask film above the write pole to remove the mask film and widen the opening at the edges of the write pole. The gap layer and notch are deposited into the widened opening above the write pole. The write pole has nonmagnetic filler material, such as alumina, surrounding it except at its trailing edge, where it is in contact with the gap layer, which is formed of a different material than the surrounding filler material.
  • Method Of Stack Patterning Using A Ion Etching

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  • US Patent:
    2013000, Jan 3, 2013
  • Filed:
    Jun 30, 2011
  • Appl. No.:
    13/174132
  • Inventors:
    Michael R. Feldbaum - San Jose CA,
    Justin Jia-Jen Hwu - Fremont CA,
    David S. Kuo - Palo Alto CA,
    Gennady Gauzner - San Jose CA,
    Li-Ping Wang - Fremont CA,
  • Assignee:
    SEAGATE TECHNOLOGY, LLC - Cupertino CA
  • International Classification:
    C23F 1/04
    C23F 1/08
  • US Classification:
    216 66, 1563454
  • Abstract:
    The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.
  • Method To Protect Magnetic Bits During Planarization

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  • US Patent:
    2013000, Jan 3, 2013
  • Filed:
    Jun 30, 2011
  • Appl. No.:
    13/174321
  • Inventors:
    David Kuo - Palo Alto CA,
    Michael R. Feldbaum - San Jose CA,
    Paritosh Rajora - Santa Clara CA,
    Hieu Lam - Milpitas CA,
  • Assignee:
    SEAGATE TECHNOLOGY, LLC - Cupertino CA
  • International Classification:
    G11B 5/84
    B05C 9/06
    B32B 3/28
    B05D 3/00
    C23F 1/00
    C23F 1/08
    B05D 1/36
  • US Classification:
    216 22, 1563451, 428174
  • Abstract:
    The embodiments disclose a method to protect magnetic bits during carbon field planarization, including depositing a stop layer upon magnetic bits and magnetic film of a patterned stack, depositing a carbon fill layer on the stop layer and using the stop layer during planarization and etch-back of the carbon field to protect the patterned stack magnetic bits during the carbon field planarization.
  • Imprint Template Fabrication And Repair Based On Directed Block Copolymer Assembly

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  • US Patent:
    2012016, Jun 28, 2012
  • Filed:
    Dec 28, 2010
  • Appl. No.:
    12/979658
  • Inventors:
    XIAOMIN YANG - Livermore CA,
    ZHAONING YU - Palo Alto CA,
    KIM YANG LEE - FREMONT CA,
    MICHAEL FELDBAUM - San Jose CA,
    YAUTZONG HSU - FREMONT CA,
    WEI HU - Chandler CA,
    SHUAIGANG XIAO - FREMONT CA,
    HENRY YANG - SAN JOSE CA,
    HONGYING WANG - FREMONT CA,
    RENE JOHANNES MARINUS VAN DE VEERDONK - PLEASANTON CA,
    DAVID KUO - PALO ALTO CA,
  • International Classification:
    B32B 3/30
    B32B 18/00
    B29C 59/02
    B29C 33/38
    C23F 1/00
  • US Classification:
    428172, 264220, 216 58
  • Abstract:
    Imprinted apparatuses, such as Bit-Patterned Media (BPM) templates, Discrete Track Recording (DTR) templates, semiconductors, and photonic devices are disclosed. Methods of fabricating imprinted apparatuses using a combination of patterning and block copolymer (BCP) self-assembly techniques are also disclosed.
  • Method To Control Mask Profile For Read Sensor Definition

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  • US Patent:
    2006016, Aug 3, 2006
  • Filed:
    Jan 28, 2005
  • Appl. No.:
    11/046421
  • Inventors:
    Richard Contreras - San Jose CA,
    Michael Feldbaum - San Jose CA,
    Mustafa Pinarbasi - Morgan Hill CA,
  • International Classification:
    G11B 5/33
    G11B 5/127
  • US Classification:
    029603010, 360324110, 029603130, 029603140
  • Abstract:
    A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.
  • Method Of Anisotropic Etching Of Substrates

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  • US Patent:
    2001004, Nov 22, 2001
  • Filed:
    Apr 21, 1999
  • Appl. No.:
    09/295100
  • Inventors:
    TAMARAK PANDHUMSOPORN - FREMONT CA,
    KEVIN YU - SAN JOSE CA,
    MICHAEL FELDBAUM - FREMONT CA,
    MICHEL PUECH - ANNCY CEDEX,
  • International Classification:
    H01L021/311
  • US Classification:
    438/712000, 438/700000, 438/701000, 438/707000, 438/706000, 438/714000, 438/719000, 438/734000, 438/735000
  • Abstract:
    A method of plasma etching of silicon that utilizes the plasma to provide laterally defined recess structures through a mask. The method is based on the variation of the plasma parameters to provide a well-controlled anisotropic etch, while achieving a very high etch rate, and a high selectivity with respect to a mask. A mixed gas is introduced into the vacuum chamber after the chamber is evacuated, and plasma is generated within the chamber. The substrate's surface is exposed to the plasma. Power sources are used for formation of the plasma discharge. An integrated control system is used to modulate the plasma discharge power and substrate polarization voltage levels.
  • Method To Control Mask Profile For Read Sensor Definition

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  • US Patent:
    8393073, Mar 12, 2013
  • Filed:
    Jul 21, 2008
  • Appl. No.:
    12/177069
  • Inventors:
    Richard Jule Contreras - San Jose CA,
    Michael Feldbaum - San Jose CA,
    Mustafa Michael Pinarbasi - Morgan Hill CA,
  • Assignee:
    HGST Netherlands B.V. - Amsterdam
  • International Classification:
    G11B 5/187
    C23F 1/12
  • US Classification:
    2960312, 2960314, 2960315, 2960316, 2960318, 216 22, 216 48, 216 67, 430313, 360324, 360327, 31511121
  • Abstract:
    A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask. This avoids the formation of a bulbous or mushroom shaped photoresist mask and therefore, avoids shadowing effects during subsequent manufacturing processes.

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