Michael R Feldbaum

US Patent:

7030035, Apr 18, 2006

Filed:

May 14, 2004

Appl. No.:

10/845651

Inventors:

Donald G. Allen - Morgan Hill CA, US
Richard Jule Contreras - San Jose CA, US
Michael Feldbaum - San Jose CA, US
Dominic Frank Truchetta - Livermore CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438758, 438729

Abstract:

To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.

US Patent:

7075094, Jul 11, 2006

Filed:

Aug 30, 2004

Appl. No.:

10/930277

Inventors:

Michael Feldbaum - San Jose CA, US
Hung-Chin Guthrie - Saratoga CA, US
Wipul Pemsiri Jayasekara - Los Gatos CA, US
Aron Pentek - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

H01J 37/305

US Classification:

2504922, 25049221, 2504923, 438473

Abstract:

A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.

US Patent:

7159302, Jan 9, 2007

Filed:

Mar 31, 2004

Appl. No.:

10/813836

Inventors:

Michael Feldbaum - San Jose CA, US
Quang Le - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/127
G11B 5/147
C23C 14/00

US Classification:

2960312, 2960313, 2960314, 2960315, 2960318, 360126, 20419232, 20419233, 20419234

Abstract:

A method for manufacturing a write head having a small write pole tip that emits magnetic flux sufficient for effective perpendicular recording. The method creates a leading edge taper (LET) between the write pole tip and a magnetic flux guide to create a sufficient magnetic flux in the write pole. The LET is fabricated by ion milling away a sacrificial striated material whose layers have different rates of ion milling. The top layer of material thus mills away faster than lower layers, creating the required tapering of a negative mold. An endpoint material stops the milling. The LET magnetic material is then spattered into the negative mold, resulting in a well defined taper of magnetic flux shaping material extending the magnetic flux guide to the write pole tip, such that the write pole tip is able to emit sufficient magnetic flux for perpendicular recording.

US Patent:

7275306, Oct 2, 2007

Filed:

Dec 12, 2003

Appl. No.:

10/735112

Inventors:

Donald Giles Allen - Morgan Hill CA, US
Richard Jule Contreras - San Jose CA, US
Michael Feldbaum - San Jose CA, US
Murali Ramasubramanian - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/127
H04R 31/00

US Classification:

2960316, 2960313, 2960314, 2960315, 2960318, 29606, 216 62, 216 65, 216 66, 360122, 360126, 360317, 451 5, 451 41

Abstract:

An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.

US Patent:

7340824, Mar 11, 2008

Filed:

Jun 30, 2004

Appl. No.:

10/883141

Inventors:

Michael Feldbaum - San Jose CA, US
John I. Kim - San Jose CA, US
Murali Ramasubramanian - San Jose CA, US
Howard Gordon Zolla - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/127
H04R 31/00

US Classification:

2960316, 2960313, 2960315, 2960318, 360121, 360122, 360126, 360317, 427127, 427128, 451 5, 451 41

Abstract:

A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.

US Patent:

7444739, Nov 4, 2008

Filed:

Mar 30, 2005

Appl. No.:

11/095979

Inventors:

Michael Feldbaum - San Jose CA, US
Wipul Pemsiri Jayasekara - Los Gatos CA, US
Mustafa Michael Pinarbasi - Morgan Hill CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

International Classification:

G11B 5/187
C23F 1/12

US Classification:

2960315, 2960312, 2960316, 2960314, 2960318, 360314, 360324, 20419234, 216 48, 216 66

Abstract:

A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.

US Patent:

7509729, Mar 31, 2009

Filed:

Apr 25, 2006

Appl. No.:

11/380189

Inventors:

Donald G. Allen - Morgan Hill CA, US
Amanda Baer - Campbell CA, US
Michael Feldbaum - San Jose CA, US
Hung-Chin Guthrie - Saratoga CA, US
Aron Pentek - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/127
H04R 31/00

US Classification:

2960316, 2960311, 2960313, 2960315, 2960318, 20419232, 20419233, 20419235, 216 62, 216 65, 216 66, 360121, 360122, 360317, 451 5, 451 41

Abstract:

A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.

US Patent:

7523550, Apr 28, 2009

Filed:

Apr 25, 2006

Appl. No.:

11/411555

Inventors:

Amanda Baer - Campbell CA, US
Hamid Balamane - Palo Alto CA, US
Michael Feldbaum - San Jose CA, US
Ming Jiang - San Jose CA, US
Aron Pentek - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

H01K 3/10

US Classification:

29852, 2960307, 29837, 29845, 29854, 205119, 205122, 360121, 360122, 360317, 427127, 427128

Abstract:

A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over a substrate and is covered with a thick layer of alumina. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer.