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Mihai A Buretea

age ~50

from Greenwich, NY

Also known as:
  • Mihai Buretea
  • Mihai Adrian Buretea

Mihai Buretea Phones & Addresses

  • Greenwich, NY
  • Warwick, NY
  • 1386 31St Ave, San Francisco, CA 94122
  • 1402 Spruce St, Berkeley, CA 94709
  • Union, NJ
  • 109 Fiddlers Elbow Rd, Greenwich, NY 12834

Business Records

Name / Title
Company / Classification
Phones & Addresses
Mihai Buretea
Managing
Burell LLC
Scientific Research and Consulting
871 Industrial Rd, San Carlos, CA 94070

Us Patents

  • Organic Species That Facilitate Charge Transfer To Or From Nanostructures

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  • US Patent:
    6949206, Sep 27, 2005
  • Filed:
    Sep 4, 2003
  • Appl. No.:
    10/656910
  • Inventors:
    Jeffery A. Whiteford - Belmont CA,
    Mihai A. Buretea - San Francisco CA,
    Erik Scher - San Francisco CA,
  • Assignee:
    Nanosys, Inc. - Palo Alto CA
  • International Classification:
    H01B001/12
  • US Classification:
    252500, 252502, 2525193, 549 41, 549 42, 562 8, 562 23, 136263, 136265, 136252
  • Abstract:
    The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.
  • Compositions And Methods For Modulation Of Nanostructure Energy Levels

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  • US Patent:
    8563133, Oct 22, 2013
  • Filed:
    Dec 9, 2005
  • Appl. No.:
    11/299299
  • Inventors:
    Jeffery A. Whiteford - Belmont CA,
    Mihai A. Buretea - San Francisco CA,
    Jian Chen - San Mateo CA,
    William P. Freeman - San Mateo CA,
    Andreas Meisel - San Francisco CA,
    Linh Nguyen - San Jose CA,
    J. Wallace Parce - Palo Alto CA,
    Erik Scher - San Francisco CA,
  • Assignee:
    SanDisk Corporation - Milpitas CA
  • International Classification:
    B32B 5/16
  • US Classification:
    428402, 428403, 428404, 428405, 428406, 428407, 977811
  • Abstract:
    Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e. g. , by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc. ).
  • Method Of Selective Coverage Of High Aspect Ratio Structures With A Conformal Film

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  • US Patent:
    7863190, Jan 4, 2011
  • Filed:
    Nov 20, 2009
  • Appl. No.:
    12/623333
  • Inventors:
    George D. Papasouliotis - North Andover MA,
    Mihai Buretea - San Francisco CA,
    Collin Mui - Mountain View CA,
  • Assignee:
    Novellus Systems, Inc. - San Jose CA
  • International Classification:
    H01L 21/44
  • US Classification:
    438677, 438661, 257E21553
  • Abstract:
    Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.
  • Organic Species That Facilitate Charge Transfer To Or From Nanostructures

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  • US Patent:
    7943064, May 17, 2011
  • Filed:
    Sep 9, 2008
  • Appl. No.:
    12/206935
  • Inventors:
    Jeffery A. Whiteford - Belmont CA,
    Mihai A. Buretea - San Francisco CA,
    Erik C. Scher - San Francisco CA,
  • Assignee:
    Nanosys, Inc. - Palo Alto CA
  • International Classification:
    H01B 1/00
    H01L 31/00
  • US Classification:
    252500, 528373, 528377, 528378, 528397, 257 40, 438 99, 438 69, 428690, 136263, 136265
  • Abstract:
    The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.
  • Nanocomposites

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  • US Patent:
    8041171, Oct 18, 2011
  • Filed:
    Sep 4, 2009
  • Appl. No.:
    12/554232
  • Inventors:
    Mihai A. Buretea - San Francisco CA,
    Stephen A. Empedocles - Los Altos CA,
    Chunming Niu - Palo Alto CA,
    Erik C. Scher - San Francisco CA,
  • Assignee:
    Nanosys, Inc. - Palo Alto CA
  • International Classification:
    G02B 5/10
  • US Classification:
    385123, 257 40, 428357
  • Abstract:
    This invention provides composite materials comprising nanostructures (e. g. , nanowires, branched nanowires, nanotetrapods, nanocrystals, and nanoparticles). Methods and compositions for making such nanocomposites are also provided, as are articles comprising such composites. Waveguides and light concentrators comprising nanostructures (not necessarily as part of a nanocomposite) are additional features of the invention.
  • Process For Group Iii-V Semiconductor Nanostructure Synthesis And Compositions Made Using Same

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  • US Patent:
    8062967, Nov 22, 2011
  • Filed:
    Jun 1, 2009
  • Appl. No.:
    12/475772
  • Inventors:
    Erik C. Scher - San Francisco CA,
    Mihai A. Buretea - San Francisco CA,
    William P. Freeman - San Mateo CA,
    Joel Gamoras - Vallejo CA,
    Baixin Qian - Sunnyvale CA,
    Jeffery A. Whiteford - Belmont CA,
  • Assignee:
    Nanosys, Inc. - Palo Alto CA
  • International Classification:
    H01L 21/3205
  • US Classification:
    438604, 257E33023, 257E29089, 977773, 977815, 977816, 977818, 977819
  • Abstract:
    Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
  • Process For Group 10 Metal Nanostructure Synthesis And Compositions Made Using Same

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  • US Patent:
    8088483, Jan 3, 2012
  • Filed:
    Dec 15, 2005
  • Appl. No.:
    11/304498
  • Inventors:
    Jeffery A. Whiteford - Belmont CA,
    Mihai A. Buretea - San Francisco CA,
    William P. Freeman - San Mateo CA,
    J. Wallace Parce - Palo Alto CA,
    Baixin Qian - Sunnyvale CA,
    Erik C. Scher - San Francisco CA,
  • Assignee:
    Nanosys, Inc. - Palo Alto CA
  • International Classification:
    B32B 5/66
  • US Classification:
    428402, 428403, 428407, 427384, 427387, 4273722
  • Abstract:
    Methods for producing Group 10 metal nanostructures are provided. The methods involve novel precursors, novel surfactants, or novel precursor-surfactant combinations. Compositions related to the methods are also featured.
  • Organic Species That Facilitate Charge Transfer To Or From Nanostructures

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  • US Patent:
    8562867, Oct 22, 2013
  • Filed:
    Jul 2, 2009
  • Appl. No.:
    12/459574
  • Inventors:
    Jeffery A. Whiteford - Belmont CA,
    Mihai A. Buretea - San Francisco CA,
    Linh Hong Nguyen - San Jose CA,
    Erik Scher - San Francisco CA,
  • Assignee:
    Nanosys, Inc. - Milpitas CA
  • International Classification:
    H01B 1/12
    H01L 31/00
  • US Classification:
    252500, 528373, 528377, 528378, 568 17, 568 58, 428690, 257 40
  • Abstract:
    The present invention provides polymeric compositions that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

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