Mihai A Buretea

US Patent:

6949206, Sep 27, 2005

Filed:

Sep 4, 2003

Appl. No.:

10/656910

Inventors:

Jeffery A. Whiteford - Belmont CA,
Mihai A. Buretea - San Francisco CA,
Erik Scher - San Francisco CA,

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01B001/12

US Classification:

252500, 252502, 2525193, 549 41, 549 42, 562 8, 562 23, 136263, 136265, 136252

Abstract:

The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

US Patent:

8563133, Oct 22, 2013

Filed:

Dec 9, 2005

Appl. No.:

11/299299

Inventors:

Jeffery A. Whiteford - Belmont CA,
Mihai A. Buretea - San Francisco CA,
Jian Chen - San Mateo CA,
William P. Freeman - San Mateo CA,
Andreas Meisel - San Francisco CA,
Linh Nguyen - San Jose CA,
J. Wallace Parce - Palo Alto CA,
Erik Scher - San Francisco CA,

Assignee:

SanDisk Corporation - Milpitas CA

International Classification:

B32B 5/16

US Classification:

428402, 428403, 428404, 428405, 428406, 428407, 977811

Abstract:

Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure, for reversibly modifying nanostructures, and for manipulating the electronic properties of nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures. Ligands of the present invention are also useful for manipulating the electronic properties of nanostructure compositions (e. g. , by modulating energy levels, creating internal bias fields, reducing charge transfer or leakage, etc. ).

US Patent:

7863190, Jan 4, 2011

Filed:

Nov 20, 2009

Appl. No.:

12/623333

Inventors:

George D. Papasouliotis - North Andover MA,
Mihai Buretea - San Francisco CA,
Collin Mui - Mountain View CA,

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/44

US Classification:

438677, 438661, 257E21553

Abstract:

Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.

US Patent:

7943064, May 17, 2011

Filed:

Sep 9, 2008

Appl. No.:

12/206935

Inventors:

Jeffery A. Whiteford - Belmont CA,
Mihai A. Buretea - San Francisco CA,
Erik C. Scher - San Francisco CA,

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01B 1/00
H01L 31/00

US Classification:

252500, 528373, 528377, 528378, 528397, 257 40, 438 99, 438 69, 428690, 136263, 136265

Abstract:

The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

US Patent:

8041171, Oct 18, 2011

Filed:

Sep 4, 2009

Appl. No.:

12/554232

Inventors:

Mihai A. Buretea - San Francisco CA,
Stephen A. Empedocles - Los Altos CA,
Chunming Niu - Palo Alto CA,
Erik C. Scher - San Francisco CA,

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

G02B 5/10

US Classification:

385123, 257 40, 428357

Abstract:

This invention provides composite materials comprising nanostructures (e. g. , nanowires, branched nanowires, nanotetrapods, nanocrystals, and nanoparticles). Methods and compositions for making such nanocomposites are also provided, as are articles comprising such composites. Waveguides and light concentrators comprising nanostructures (not necessarily as part of a nanocomposite) are additional features of the invention.

US Patent:

8062967, Nov 22, 2011

Filed:

Jun 1, 2009

Appl. No.:

12/475772

Inventors:

Erik C. Scher - San Francisco CA,
Mihai A. Buretea - San Francisco CA,
William P. Freeman - San Mateo CA,
Joel Gamoras - Vallejo CA,
Baixin Qian - Sunnyvale CA,
Jeffery A. Whiteford - Belmont CA,

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

H01L 21/3205

US Classification:

438604, 257E33023, 257E29089, 977773, 977815, 977816, 977818, 977819

Abstract:

Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.

US Patent:

8088483, Jan 3, 2012

Filed:

Dec 15, 2005

Appl. No.:

11/304498

Inventors:

Jeffery A. Whiteford - Belmont CA,
Mihai A. Buretea - San Francisco CA,
William P. Freeman - San Mateo CA,
J. Wallace Parce - Palo Alto CA,
Baixin Qian - Sunnyvale CA,
Erik C. Scher - San Francisco CA,

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

B32B 5/66

US Classification:

428402, 428403, 428407, 427384, 427387, 4273722

Abstract:

Methods for producing Group 10 metal nanostructures are provided. The methods involve novel precursors, novel surfactants, or novel precursor-surfactant combinations. Compositions related to the methods are also featured.

US Patent:

8562867, Oct 22, 2013

Filed:

Jul 2, 2009

Appl. No.:

12/459574

Inventors:

Jeffery A. Whiteford - Belmont CA,
Mihai A. Buretea - San Francisco CA,
Linh Hong Nguyen - San Jose CA,
Erik Scher - San Francisco CA,

Assignee:

Nanosys, Inc. - Milpitas CA

International Classification:

H01B 1/12
H01L 31/00

US Classification:

252500, 528373, 528377, 528378, 568 17, 568 58, 428690, 257 40

Abstract:

The present invention provides polymeric compositions that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.